Beilstein J. Nanotechnol.2016,7, 1676–1683, doi:10.3762/bjnano.7.160
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Keywords: FEM modeling; Joule heating; self-heating; spintorquetransfermagneticrandomaccessmemory (STT-MRAM); thermoelectrics; Introduction
Spintorquetransfermagneticrandomaccessmemory (STT-MRAM), a type of non-volatile memory, functions through the resistance ratio between the parallel (ON
magneticrandomaccessmemory (STT-MRAM). Proposed heating methods include modified material stack compositions that result in increased self-heating or external heat sources. In this work we analyze the self-heating process of a standard perpendicular magnetic anisotropy STT-MRAM device through numerical
Austin Deschenes Sadid Muneer Mustafa Akbulut Ali Gokirmak Helena Silva Electrical Engineering, University of Connecticut, Storrs, Connecticut, 06082, USA 10.3762/bjnano.7.160 Abstract Thermal assistance has been shown to significantly reduce the required operation power for spintorquetransfer
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Figure 1:
MRAM device structure with a stack radius of 10 nm. Materials, with exception of contact regions, a...